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| 2SK1197 Silicon N-Channel enhanced MOS FET Application High frequency amplifier Features * High endurance capability against static electrical breakdown (C = 200pF) -- Between Gate from Source : 500 V Typ -- Between Drain from Source : 1000 V Min, 1500 V Typ * Wide forward transfer admittance |yfs| = 150 mS Typ * High breakdown voltage VDSS = 100V * Small output capacitance (Coss 10 pF) Outline TO-126 MOD D 1 2 3 1. Drain 2. Source 3. Gate G S 2SK1197 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes 1. Value at TC = 25C Symbol VDSS VGSS ID I D(pulse) Pch Pch* Tch Tstg 1 Ratings 100 9 0.5 1.0 1.25 20 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol Min V(BR)DSS V(BR)GSS 100 9 -- 0.3 -- 100 -- -- Typ -- -- -- -- -- 150 10 4 Max -- -- 0.1 1.8 5.0 -- -- 10 Unit V V mA V V mS pF pF Test conditions I D = 1 mA, VGS = 0 I G = 1 mA, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.2 A, VGS = 9 V I D = 0.3 A, VDS = 10 V VDS = 50 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Drain to source on voltage Forward transfer admittance Input capacitance Output capacitance VGS(off) VDS(on) |yfs| Ciss Coss 2SK1197 30 Power vs. Temperature Derating 1.0 Maximum Safe Operation Area Channel Dissipation Pch (W) 20 Drain Current ID (A) 0.5 tion era Op C) DC = 25 (T C 10 0.2 0 50 100 Case Temperature TC (C) 150 0.1 10 100 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 0.5 4.5 V Pulse Test 4V 0.4 3.5 V 0.3 3V 2.5 V VGS = 2 V Drain Current ID (A) 0.5 Typical Transfer Characteristics 0.4 Drain Current ID (A) VDS = 10 V Ta = -25C 25C 0.3 75C 0.2 0.2 0.1 0.1 0 10 20 Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Drain Current 0 1 3 4 2 Gate to Source Voltage VGS (V) 5 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Drain Current 100 VGS = 9 V Forward Transfer Admittance yfs (mS) 1,000 VDS = 10 V f = 1 kHz Ta = -25C 25C 10 Ta = 75C 25C 1.0 -25C 100 75C 10 0.01 0.1 Drain Current ID (A) 1.0 0.1 0.01 0.1 Drain Current ID (A) 1.0 2SK1197 Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (mS) Input Capacitance vs. Drain to Source Voltage 100 Input Capacitance Ciss (pF) VGS = 0 f = 1 MHz 1,000 VDS = 10 V ID = 10 mA 100 10 10 100 200 500 Frequency f (MHz) 1,000 1 10 100 Drain to Source Voltage VDS (V) Reverse Transfer Capacitance vs. Drain to Source Voltage Reverse Transfer Capacitance Crss (pF) Output Capacitance vs. Drain to Source Voltage 100 Output Capacitance Coss (pF) VDS = 0 f = 1 MHz 1.0 VGS = 0 f = 1 MHz 10 0.1 0.01 1 100 10 Drain to Source Voltage VDS (V) 1 10 100 Drain to Source Voltage VDS (V) 2SK1197 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 |
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